Design and Analysis of the Electrical Properties of Different Dielectric Oxide Materials for Electrostatic Doping Through Nanowire Multichannel FET

This project focuses on identifying a suitable dielectric oxide material for electrostatic doping through charge plasma and heterojunction. The oxides selected for this study are HfO2, GeO2, Si3N4, and SiO2, which are common dielectric oxides with various applications in different fields. To compare the electrical properties of these oxides, Sentaurus TCAD software has been used to run simulations and analyze their dielectric constants, breakdown strengths, and bandgaps. The results indicate that HfO2 has the highest dielectric constant and a relatively large bandgap, making it a strong candidate for electrostatic doping applications. Si3N4 also has a high dielectric constant and strong breakdown strength, while SiO2 has the highest bandgap. The study highlights the importance of considering the specific requirements of an application when choosing a dielectric oxide material. Factors such as threshold voltage, subthreshold slope, Ion/Ioff ratio, transfer characteristics should be taken into account. Overall, this project provides valuable insights into the electrical properties of different dielectric oxides and how they can be used in electrostatic doping applications. The findings can help researchers and engineers in the field of semiconductor technology to make informed decisions about which dielectric oxide material is best suited for their specific applications.