X-Band High Power GaN SPDT Switch MMIC for Space based Radar Front End

This paper presents the design and realization of a X-Band GaN HEMT based high-power Single Pole Double Throw (SPDT) switch for a space based phased array RADAR front ends. The switch is designed using the space qualified 0.25um GaN-on-SiC process of United Monolithic Semiconductors. The switch is designed using series-shunt configuration and its performance is measured and evaluated over the frequency band of 9 GHz – 11 GHz. and fits in a size of 1.3mm X 1.79mm. The switch exhibits state-of-art performance with an insertion loss of less than 0.85dB, isolation> 25 dB and on-state power handling capability of better than 42 dBm at 0.5 dB insertion loss compression point. The input return loss is better than 20dB and the output return loss of both the on and off states are better than 17dB over the entire bandwidth.