Focuses and Concerns of Dynamic Test for Wide Bandgap Device: A Questionnaire-Based Survey

Motivated by the excellent advantages of high switching speed, low
on-
resistance, and high thermal conductivity, the wide bandgap (WBG) devices, including silicon carbide metal-oxide-semiconductor field-effect transistor and gallium nitride high electron mobility transistors, have received increasing attention. However, the high switching speed of WBG devices also brings more concerns and challenges for the dynamic test, which need to be clarified. Based on the questionnaire-based survey administered to engineers and researchers in both the power electronics industry and academia, the focuses and concerns of the dynamic test for WBG devices are investigated in this article. According to the professional background of respondents, the experience, focuses and concerns for the dynamic test of WBG devices are obtained. Subsequently, the correlation between designed questions is analyzed. It is concluded that the measurement probe has a critical effect on the confidence level of the test results, and needs to be improved in some key parameters, such as the bandwidth, common mode rejection ratio, cost, and consistency, to meet the demand of the dynamic test of WBG devices. In addition, the outcomes of this survey and future frameworks for the dynamic test of WBG devices are concluded, which provides a roadmap for researchers and industry professionals to tackle the challenges associated with the dynamic test of WBG devices.