Design and Investigation of SRAM using Charge Plasma Dopingless Nanowire FET

A static random-access memory (SRAM) using Charge Plasma Dopingless Nanowire Field Effect Transistor (CP-DLNWFET) with radius 5 nm and channel length of 20nm is proposed. With the FET devices, a problem in decreasing the channel length due to Short Channel Effects (SCEs) and as subthreshold swing (SS) can’t be decreased below 60mV/decade as below it there is an irregular variation between the current and voltage. To overcome these limitations, Nanowire device structure with charge plasma technique is proposed to achieve better current conditions for the implementation of SRAM circuit. The charge plasma technique with appropriate selection of work function for source/drain metal electrodes are induced in dopingless structure. Random dopant fluctuation effect is reduced with the help of dopingless devices with easier steps of fabrication using lower thermal budget. During the operation of the proposed SRAM using CP-DLNWFET device at $V_{\mathbf{DD}} =$ 1V, has achieved 9.96 % for write mode, 24.4 % for read mode and 22.3 % for standby mode proving its stability than previously proposed devices.