Nanowire Field Effect Transistor with Multiple Gates: A Simulation Study

This paper gives analysis and simulation of performance of different gates present in Multi-gate Nanowire FET (MG-NWFETs) such as, tri, pi, double, omega and gate all around structures using nanohub simulator, gates are compared. The comparative analysis is done for transfer characteristics of the MG-NWFETs with constant gate length of 10nm. Considering the best performing gate all around (GAA) structure the analysis is done by varying the oxide layer thickness, gate length and substrate as silicon and germanium material for GAAFET and it is simulated. The IV characteristics is drawn for respective analysis.