High Current Density Vertical Nanowire TFETs With I₆₀ > 1 μA/μm

We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of
$1.2~\mu \text{A}/\mu \text{m}$
, paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at
$\text{V}_{DS}$
= 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of
$205~\mu \text{S}/\mu \text{m}$
, the ON-current for the same device is
$18.6~\mu \text{A}/\mu \text{m}$
at
$\text{V}_{DS}$
= 300 mV for
$\text{I}_{OFF}$
of 1 nA/
$\mu \text{m}$
.