Impact of Yttria Spacer on the Performance of MgZnO/CdZnO Heterostructure

In the current study, we show the effects of the Y
2
O
3
spacer layer on the mobility
$(\mu)$
, sheet carrier density
$(n_{\mathrm{s}})$
, and conductance
$(n_{\mathrm{s}}\times\mu)$
of a MgZnO/CdZnO (MCO) heterostructure made by dual ion beam sputtering (DIBS). When compared to MCO heterostructures without a spacer layer, Hall measurements reveal that the addition of a 100-nm Y
2
O
3
spacer layer increases mobility by almost four times. The impact of Cd content on the functionality of heterostructure should also be empirically investigated. The outcomes have important implications for the design of a large-area, low-cost heterostructure field-effect transistor (HFET) for sensors, microwaves, and power devices.