Percolation Nature of Threshold Switching: an Experimental Verification

This paper details a process used to create an interconnect in a conducting systems, such as amorphous or polycrystalline semiconductors. An experimental verification on the plasticity that supports the percolation conduction mechanism is provided. The plasticity observed in the sample could be harnessed in the development of new electronic devices that require flexibility and adaptability, such as wearable electronics and bendable screens. Overall, TEM characterization, in combination with SAED analysis, revealed a highly oriented crystalline structure in the sample. In addition, the results of this study have implications for the design of new memory devices that are based on a percolation conduction mechanism, which could potentially lead to the development of more efficient and reliable non-volatile storage technologies.