Reducing Indium Consumption in Silicon Hetero Junction Solar Cells With TCO Stack Systems of ITO and AZO

This article reports on the reduction of indium consumption in bifacial rear emitter n-type silicon heterojunction (SHJ) solar cells by substituting the transparent conducting oxide (TCO) indium tin oxide (ITO) with aluminum doped zinc oxide (AZO). AZO, ITO, and stacks of both TCOs are sputtered at room temperature and 170 °C on both sides of SHJ solar cells and glass samples. The short circuit current density (
J_SC
) of AZO SHJ cells is lower than that of ITO-based cells, possibly due to a smaller optical band gap
E
_G
= 3.35 eV of AZO in contrast to
E_G
= 3.71 eV for ITO, which could lead to stronger parasitic blue absorption for AZO cells. Series resistance
R
_S
of pure AZO SHJ solar cells is high mainly due to high contact resistance
R
_C
between silver (Ag) metallization and AZO and high
R
_C
between amorphous silicon (a-Si) and the transparent AZO with low electron density
n
_e
. Using ITO
_a-Si
-AZO-ITO
_Ag
stacks, which saves about 50% of ITO, enables
R_S
values comparable to the ITO reference group, resulting in the same efficiency as the pure ITO cells. By replacing ITO
_a-Si
with a high
n_e
AZO
_a-Si
the lowest
R_S
is achieved. This AZO
_a-Si
-AZO-ITO
_Ag
structure saves about 70% ITO. Damp heat tests on cell and glass samples reveal a clear advantage of TCO stacks over AZO single layers.