Dynamic Flash Memory with Fast Block Refresh

This paper reviews a Dynamic Flash Memory (DFM) based on the FinFET and Surrounding Gate Transistor (SGT) architectures. Like DRAM, the refresh is required, but Fast Block Refresh improves the duty ratio. Analogous to Flash, three basic operations of “0” Erase, “1” Program, and Read are necessary, but the ability to carry out the “1” refresh without using sense amplifiers enables the read and write operations in the background, which results in a faster system.