Electrical switching of insulating antiferromagnet/heavy metal bilayers

Efficient and reliable electrical writing and reading of the Néel vector in antiferromagnetic insulators is a key prerequisite in view of using this class of materials as active elements in future spintronic devices. Here, we study the current-induced switching of the Néel vector in NiO/Pt and CoO/Pt bilayers. We compare the signal read out electrically, via the spin Hall magnetoresistance effect, with the imaged magnetic domain structure and from this comparison we identify the switching mechanisms that lead to the reorientation of the Néel vector in the thin films.