VCMA-MTJ: towards Ghz operation low power MRAM

With STT-MRAM now in mass production for embedded flash memory replacement at several foundries, research shifts towards lower power switching mechanisms. We review opportunities and challenges of voltage controlled MRAM through the VCMA effect. We present the material research needed to improve VCMA coefficient in production-relevant magnetic tunnel junctions. We also review precessional switching mechanism and constrains it poses on device operation and propose several solutions and in depth studies carried out on 300mm integrated VCMA-MTJ devices.