Write-error rate estimation of voltage-controlled magnetization switching in a magnetic-topological-insulator-based device

We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic topological insulator (MTI) device by means of the micromagnetic simulation. This device realizes magnetization switching via spin-orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA) which are derived from 2D-Dirac electronic structure. As a result, this device is not easily affected by peripheral electrical circuits and is extremely robust against circuit delay and signal-to-noise ratio. The WERs as a function of temperature are extremely low due to steep change in VCMA. Furthermore, the larger SOT can improve thermal stability factor. This study provides a new perspective for developing voltage-driven spintronic devices with ultra-low power consumption.