Electrodeposited CoPt multilayered-nanowire for 3D memory device

In this study, we construct composite structures of CoPt multilayer alloy nanowires by electrodeposition using a polycarbonate template membrane (PT). The holes in PT are subsequently filled with CoPt multilayer alloy films to form nanowires. The composition of the films can be controlled by modifying the potential to produce high anisotropy CoPt alloy multilayer nanowires. The CoPt multilayer nanowires have a periodic structure like bamboo with a chemical composition of (Co
80
Pt
20
/Co
30
Pt
70
)
n
. Polycrystalline and ferromagnetic characteristics were visible in a single layer of Co
80
Pt
20
nanowire. A vertical 3D magnetic domain wall memory has a ferromagnetic bit layer and a domain wall layer. Thus (Co
80
Pt
20
/Co
30
Pt
70
)
n
multilayer nanowires can be used in domain wall controlled 3D memory devices like racetrack memory.