Development of Accurate Model for Memristor-Based Filters and Oscillators: Amplitude, Frequency and Ramp-Rate Dependent Analysis

The utilization of memristors in analog circuits has been significantly enhanced through the development of various models, namely linear-ion drift, non-linear-ion drift, Simmons tunnel barrier, ThrEshold Adaptive Memristor, and Voltage ThrEshold Adaptive Memristor (VTEAM) models. These models have been instrumental in improving the effectiveness and functionality of memristors in analog circuit applications. The utilization of Joglekar, Biolek, Prodromakis, and Kvatinsky window functions has been employed to investigate the ideal behavior of memristors. In order to facilitate the advancement of analog circuits employing memristors; it is imperative that proposed models must exhibit certain essential characteristics, including amplitude-dependent, frequency-dependent, and ramp-rate dependent behavior. The applicability of the VTEAM model in conjunction with the Biolek window function for describing amplitude variation, as well as the Prodromakis model for describing ramp-rate dependent behavior, is demonstrated in this brief. In addition, we have provided analysis on the choice of circuitry for window functions in combination with VTEAM models. We specifically investigated the design of analog filters with low-pass and high-pass characteristics, and have found that the utilization of the Joglekar window function and Prodromakis window function yields superior filter performance, respectively. Subsequently, an op-amp based phase-shift oscillator was designed with the proposed memristor model.