Low Frequency Noise in DNTT/Cytop™ Based Organic Thin Film Transistors

In this work we show the results of low frequency noise measurements (LFNMs) in staggered bottom gate top contact organic thin film transistors (OTFTs) made with dinaphtho-[2,3-b:
$2^{\prime} $
,
$3^{\prime} $
-f]thieno[3,2-b]thiophene (DNTT) as semiconductor layer and CYTOP
$^{\text {TM}}$
as dielectric layer. The measured 1/f noise follows a correlated number-mobility fluctuation mechanism with an extracted trap density
$ < {10}^{{10}}$
cm
$^{{-{2}}}$
eV
$^{-{1}}$
, the lower value ever reported for OTFTs and comparable to c-Si devices. On the other hand, the extracted Coulomb scattering parameter is in the order of
$10^{{7}}$
Vs/C, in line with previous measurements on organic transistors. In particular we found similar results from device batches with technological differences and a much lower noise from reference devices with SiO2 dielectric, suggesting that the low noise and extracted trap density can be mainly attributed to the quality of the DNTT/Cytop
$^{\text {TM}}$
interface.