Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a
${c}$
-axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown voltage. A combination of the OSFET with
${L}/{W}$
of 60 nm/60 nm and a single damascene ferroelectric capacitor (FE-Cap) attained FE-Cap area reduction to
$0.06~\mu \text{m}~^{\mathrm{ 2}}$
per cell. The FeRAM achieved a write time of 10 ns, a rewriting endurance of 109 cycles, and a data retention time of 100 min at 85°C. The OSFET is an optimal selector element for emerging memories.