Hall Effect in Strong Electric Fields in AlGaAs/InGaAs/GaAs Heterostructures with Donor-Acceptor Doping

This article presents theoretical and experimental dependences of the Hall voltage in high electric fields with a static magnetic field. Measurements were carried out on the pHEMT heterostructure with donor-acceptor doping. Due to the fact that in high electric fields there is a distribution of electrons from the
$\Gamma$
-valley to the satellite L-and X-valleys, it is expected that the dependence of the Hall voltage on the electric field will be nonlinear. The Hall voltage was modeled for fields up to 10 kV/cm. Theoretical calculations predict saturation at the electric field of about 3.5 kV/cm, and then a decrease in the Hall voltage at large fields. Experimentally, it was possible to measure only up to the moment of saturation. However, saturation in the experiment occurred earlier than in the theoretical model (with the electric field of about 1 kV/cm). Assumptions have been made as to what this may be due to.