Investigation of the Effect of Stretching on the Properties of Ge2Sb2Te5 Thin Films

The purpose of this work was to study the effect of stretching on the properties of thermoelectric material films. The thermoelectric and electrophysical properties of Ge2Sb2Tes thin films were studied at various heat treatment temperatures. The results of measuring the electrophysical and thermoelectric properties of Ge2Sb2Tes thin films showed that the highest value of the power factor, namely 0.13 mW/(m K
²
), have films heat treated at 260°C. The resistance and Seebeck coefficient of Ge2Sb2Tes thin films were measured before and after mechanical loading. Tensile loads were 2.5; 5; 7; 10 kgf. The results of measurements of the Seebeck coefficient and resistance showed that the highest tensile load that Ge2Sb2Tes thin films can withstand without significant changes in the properties of thin films is 2.5 kgf. The value of the power factor showed that the initial films have power factor about 0.05 mW/m K
²
, after the first loading the value of power factor increased to 0.07 mW/m K
²
, and after the second loading it decreased to 0.056 mW/m K
²
.