Cryogenic Low-Noise Amplifier 1-3GHz

Cryogenic low-noise microwave amplifiers are an important tool in the measurement systems of various devices in the field of radio astronomy and quantum computing. The quality of measurements depends on its parameters - gain, equivalent noise temperature and power consumption. In the paper, we present a broadband low-noise cryogenic microwave amplifier operating in the frequency range of 1–3 GHz at an ambient temperature of 4 K. BFP840F heterostructural bipolar silicon germanium transistors were used as active elements. The design of the amplifier is a printed circuit board with lumped elements soldered on it. PCB packed in an aluminum case with input and output SMA connectors and a power connector. The measured parameters of the amplifier - the gain and the equivalent noise temperature at an ambient temperature of 4 K were more than 30 dB and less than 4 K, respectively. The power consumption of the amplifier was less than 8 mW.