Novel Reconfigurable Field-Effect Transistor With Arch-Shaped Gate to Improve On-State Current

In this article, we report a novel structure of reconfigurable field-effect transistor (RFET) with arch-shaped control gate (ASG)-RFET. Compared with the conventional RFET, the ON-state current
${I}_{\text{ON}}$
of the proposed ASG-RFET is found to improve about 5.87 times for the n-type program and 4.32 times for the p-type program. The current enhancement mechanism and the impact of geometry parameters are investigated, in the point of threshold voltage (
${V}_{\text {TH}}$
), ON-state current (
${I}_{\text{ON}}$
), off-state current (
${I}_{\text {OFF}}$
), subthreshold swing (SS), gate capacitance (
${C}_{\text {gg}}$
), and propagation delay
$\tau $
by 3-D technology computer-aided design (TCAD) simulations. It is demonstrated that the tunneling rate and tunneling area are increased significantly in novel RFET. Moreover, the propagation delay is declined six times under the combined action of ON-state current and gate capacitance. The underlying physical mechanism is also discussed.