Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part II: Application and Results

The overall purpose of this work (including Part I in this issue) is to demonstrate the physical modeling of InP/InGaAs double heterojunction bipolar transistors (DHBTs) using a deterministic Boltzmann transport equation (BTE) solver and an augmented drift-diffusion (aDD) solver. In this Part II, the BTE and aDD solver are applied to a DHBT technology, leveraging a physics-based HICUM/L2 compact model for extracting experimental reference data. To account for uncertainty in the device profile and material properties, a calibration method is employed for matching the simulation results to measurable electrical quantities of DHBTs. Although the two solvers produce comparable results for the terminal characteristics of the DHBT, the BTE simulations expose significant physical phenomena that cannot be captured by transport formulations relying on moments of the BTE.