Low temperature characterization and modeling of IGBTs

The turn-off switching characteristics and breakdown voltage of both punch-through (PT) and non-punchthrough (NPT) 1GBTs are examined over a temperature range of -125 to 100/spl deg/C. A physics-based PSpice model, incorporating much of the device behavior, is also described. Results from the model are compared to experimental waveforms and good agreement is found.