Impact of GaN μLEDs aspect ratio on bandwidth and efficiency

Gallium Nitride (GaN) microLEDs have received a lot of attention in the field of microdisplays due to their interesting properties, such as high luminosity and robustness, and they are also gaining interest in the field of Visible Light Communication (VLC). With this increasing interest, studying carrier dynamics in these devices is crucial to understand how the recombination mechanisms affect their performance. In this paper, we quantify the effect of perimeter over surface ratio on the performance of Multiple-Quantum-Wells InGaN/GaN μLEDs.