Lifetime and Photosensitivity in Laser Exposed TFSI-Treated MoS2

2D semiconductors such as MoS
2
hold promise for next generation optoelectronics. However, their low photoluminescence quantum yield (PLQY) inhibits their industrial use. Chemical treatments including trifluoromethansulfonimide (TFSI) acid have demonstrated PLQY enhancement up to near unity but struggle with consistency within literature. We demonstrate laser light exposure over large time scales (5 hours) is responsible for discrepancies in photoluminescence (PL) enhancement factors. A 74X enhancement of photoluminescence intensity is observed in TFSI-treated MoS
2
with corresponding increases in carrier lifetimes.