Design of FBAR/IPD/MMIC chips for 5G applications

This invited talk firstly presents a compact low-loss high-selectivity excellent-isolation duplexer chip for LTE Band-3 industrial applications based on the film bulk acoustic resonator (FBAR) technology. At present, the FBAR technology is mainly used for bands of the fourth generation (4G). As the frequency of signal increases, there is transverse acoustic leakage, resulting in filter performance degradation. This talk also introduces a highselectivity FABR filter chip in 3.4-3.6 GHz, which shows the potentiality of the applications of FBAR for 5G. FBAR technology also has its own limitations, when the frequency continues to rise to 5G millimeter-wave band. Integrated passive device (IPD) technology can be used as an alternative of FBAR to realize millimeterwave filters. In the implementation of amplifiers, monolithic microwave integrated circuit (MMIC) technology is the main technology.