A DC~67 GHz Memristive RF Switch Based on Conductive-Bridging RAM on High-Resistivity Silicon Substrate

A RF switch based on the conductive bridge random access memory (CBRAM) technique is proposed and fabricated on a high-resistivity silicon (HRS) substrate. The CBRAM-based switch can maintain its ON/OFF state without a continuous biasing, leading to ultralow power consumption potentially. Experimental and equivalent circuit results show the switch provides a relatively low ON-state insertion loss of less than 1.2 dB up to 67 GHz. The OFF-state isolation is over 10 dB. The retention and switching characteristics of the proposed memristive switch are tested. It is demonstrated that the baking process at 125°C has small impact on the ON/OFF-state resistances and the device can still be switched under the high temperature of 85°C.