A Novel SA-LIGBT with Dielectric Isolation

A novel shorted-anode lateral insulated gate bipolar transistor with dielectric isolation (DI-SA LIGBT) is proposed in this paper. The DI-SA structure is formed by introducing a dielectric trench between P+ and N+in the SA devices. The DISA structure isolation consists of vertical and lateral parts. The lateral dielectric isolation trench increases the anode current path, reduces the resistance ratio between the drift region and the collector, and effectively suppresses the snapback phenomenon in the SA LIGBT unipolar-to-bipolar mode. In the DI-SA LIGBT structure, the snapback and switching speed of the device can be optimized by adjusting the width and length of the vertical and lateral dielectric isolation trench. This paper compares the controllable advantages of DISA LIGBT and conventional SA LIGBT through Technology Computer-Aided Design (TCAD) simulation.