A 10-Gb/s Low-noise and Low-crosstalk Transimpedance Amplifier Designed in 130-nm BiCMOS

In this paper, we propose a 10Gb/s pseudo-differential Trans-impedance Amplifier (TIA) for the high-speed receiver, which employs the inductive-peaking technique to improve the noise performance and bandwidth, and a low-crosstalk Electrostatic Discharge (ESD) architecture to improve the crosstalk immunity of the receiver. The whole receiver circuit which implemented in 130-nm Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) includes a low-crosstalk ESD, a pseudo-differential TIA, a Direct Current Offset Correction (DCOC), a single-ended to differential converter (S2D) and an output buffer (OB). The simulated bandwidth and transimpedance gain of receiver are 8.5 GHz and 70 dB $\Omega$, respectively, and the input reference RMS noise is 1326nA with a 200fF photodiode. Moreover, the simulation results show that the supply noise rejection ratio is improved by 25dB @ 5GHz with the proposed ESD architecture. The total current of the pseudo-differential TIA is 7. 14mA under 3. 3V supply.