A novel high-precision compact SCR model for ESD protection circuit simulation using SPICE

In this paper, we present a novel compact physical model for the silicon-controlled-rectifier (SCR), which incorporates multiple secondary effects within the device, along with an improved E-M model for the bipolar junction transistor (BJT). Our model is designed to work with current electronic design automation (EDA) simulation tools, and its accuracy is demonstrated through consistent simulation results with measured results of the SCR under 0.18$\mu$m BCD. Compared to previous models, the proposed model exhibits enhanced precision, and its layout parameters can be adjusted to suit different EDA simulation tool environments.