Bandpass Power Divider Module Based on Integrated Passive Fabrication Process

In the field of modern microwave radio frequency application, power divider is an important integrated passive device (IPD) to realize signal matching, power distribution, frequency band selection and filtering, etc. There is also a higher demand for miniaturization and low cost in the market. In this paper, a miniaturized bandpass power divider module is designed on the GaAs substrate based on the IPD fabrication process, which realizes the power equalization function in a specific frequency range and has good out-of-band rejection characteristics. The band-pass power divider module is integrated by a high-pass filter, a low-pass filter, a coupler, and a combiner, with a compact structure having a chip area of 4.8 mm $\times$ 1.8 mm $\times$ 0.22 mm. It can achieve a fourth-order bandpass frequency response with transmission zeros at 0.4 GHz and 3.4 GHz on both sides of the passband. The center frequency of the bandpass response is 1.5 GHz, and the fractional bandwidth is about 40% between 1 GHz to 2 GHz. The insertion loss is 4.7 dB, and the return loss and isolation are better than −15dB and −18dB, respectively. Simulation results indicate the proposed bandpass power divider can achieve equal power division, which has the characteristics of wide frequency band, high isolation, low insertion loss and miniaturization. Transmission zero effectively improves the roll-off factor of the passband and the out-of-band rejection, enhancing the performance of out-of-band filtering and selectivity.