A V-Band Cascoded Low Noise Amplifier with Path Coupling between Gate and Source Terminals in 90-nm CMOS

This paper presents a low noise amplifier (LNA) fabricated in TSMC 90-nm CMOS process technology for V-band applications. The proposed circuit adopts two stages of common-source common-gate (CS-CG) cascoded topology. By using the path coupling technique between the gate terminal inductor and the source inductor for both the common-source and common-gate parts, we can boost the overall gain with a low level of noise figure (NF). We measured the resultant fabricated chip by probing test. At the 63 GHz frequency, the measured maximum gain is 15.6 dB with a −3-dB bandwidth up to 9 GHz wide. The measured lowest noise figure is 3.3 dB at 61.8 GHz and noise figures are all below 6 dB within the frequency range from 54 GHz to 64 GHz. The measured input 1-dB compression point is −22.8 dBm and the measured input third order intercept point is −10.6 dBm. The chip size is 0.651 × 0.694 mm
²
, and the total power consumption is 12.2mW under a 1.2-V supply voltage.