Comparative Analysis of n- and p-Type Ferroelectric Tunnel Junctions Through Understanding of Non-FE Resistance Switching

We re-evaluate the performance of the ${p}$ -type ferroelectric tunnel junction (FTJp) by introducing a perspective that includes non-ferroelectric (FE) resistive switching (RS). Contrary to the previous studies that FTJp exhibits significantly lower on-current density ( ${J}_{\text {on}}{)}$ compared to the ${n}$ -type FTJ (FTJ $_{\text {n}}{)}$ , our observations show that FTJp exhibits comparable ${J}_{\text {on}}$ to FTJn, thus achieving a higher tunneling electroresistance (TER) ratio. By analyzing low-frequency noise and temperature dependence of the fatigue rate, we demonstrate that the non-FE RS causes the increase in the ${J}_{\text {on}}$ and TER ratio of FTJp. Furthermore, we discover a new advantage of FTJp: It exhibits lower read noise than FTJn in the operating region governed by the FE RS.