A True Random Number Generator Based on Semiconductor-Vacancies Junction Entropy Source and Square Transform Method

In this work, we demonstrate a high-throughput true random number generator (TRNG), which passes the National Institute of Standards and Technology (NIST) 800–22 and 800-90B randomness tests. A novel TiN/HfO2/n-Si structured semiconductor-vacancies (S-VOs) junction entropy source is developed with an area of 4 F2. The TRNGs are implemented by the proposed square transform method in the voltage domain using an analog-to-digital converter (ADC). According to the measured statistical characteristics, the TRNGs exhibit excellent robustness and a high throughput of 1.6 Mbps by experiment and 20 Gbps by theory.