Study on the Effect of Water Spraying Mode on the N Content of Wafer Surface after SC1 Cleaning in Light Doping Process

In the lightly doping process, it was found that the N content on wafer surface increased after wet cleaning process. In this paper, XPS was used to characterize the N content on wafer, and the effect of different $CO_{2}$ water spraying modes on the N content of the wafer after SC1 cleaning was studied. The results show that the $CO_{2}$ water spraying by fix mode is not enough to clean the center of the wafer, which leads to high N content in the area. Compared with fix mode, the $CO_{2}$ water spray can directly cover the wafer center by scan mode, which can enhance the cleaning ability of $CO_{2}$ water to the wafer center and effectively reduce the N content in the area after the wet process.