Effect Of Abrasive on the CMP Performance of C-Plane (0001) GAN Flim

In gallium nitride (GaN) chemical mechanical planarization (CMP) process, abrasive directly determines the material removal rate (MRR) and the surface quality. In the present research, the effects of $SiO_{2}, Al_{2}O_{3}$ and their mixture on MRR and surface quality was analyzed. The experimental results verified the addition of abrasive significantly increased the MRR, and SiO
2
obtained slower MRR and better surface quality than $Al_{2}O_{3}$ after polishing. Moreover, SiO
2
mixed with $Al_{2}O_{3}$ could obtain higher MRR and lower surface roughness.