Impact of Slurry for Dishing Reduction During CU CMP

The chemical mechanical planarization (CMP) is one of the key process to achieve global and local surface planarization in integrated circuits (IC) manufacture. Defects such as dishing pits are easily formed on the Cu surface. Reducing Cu dishing of Cu CMP for removing thick Cu has been studied in this paper. A neutral pH slurry with good corrosion resistance and small particle size abrasives was investigated. The Atomic Force Microscope (AFM) and Transmission Electron Microscope (TEM) results indicate that the slurry can reduce the depth of dishing pit effectively.