Effect of Surfactants on CMP Properties of M-Plane Sapphire

M-plane sapphire is commonly used as a substrate material for gallium nitride and zinc oxide. Chemical mechanical polishing (CMP) is one of the most effective methods to achieve atomic-scale smooth surface. Each component of the slurry plays an important role in the CMP process. So, the effect of three surfactants, JFCE, SDBS and CTAB on the CMP removal rate and surface roughness ofM-plane sapphire was investigated. From the result, it is found surfactant can improve the removal rate and surface quality of M-plane sapphire. Meanwhile, JFCE is slightly better than the other two in the same condition.