Fabrication and Characterization of a Novel Embedded Mirror Gate Sonos

A novel embedded mirror gate SONOS is fabricated and its electrical performance is observed. Compared with traditional 2T SONOS, the mirror gate SONOS with two split-gate SONOS symmetrically distributed on sides of a selective gate can save over 25% of cell area. The fabrication of the embedded mirror gate SONOS is quite simple, and no additional mask is added as compared to 2T cells. Dedicated source line and shared source line array structure of the mirror gate SONOS are investigated. The E/P curve of both arrays reveal good Vt window. Furthermore, the shared source line array applied in a differential IP passes the functional test in a wide operating temperature of -40~85°C.