Study of Photo-Resist (PR) Strip Rate with High Temperature Pedestal for AL Patterning Process

In this paper, we studied the influence of pedestal temperature and pressure on Photo-resist(PR) shrink firstly. The results show that the higher pressure, the faster PR shrink when pedestal temperature was $\gt280^{\circ} \mathrm{C}$, but the maximum shrink is >10,000 Å. When the pressure and heating time are fixed, the higher pedestal temperature is, the greater PR shrink will be. In addition, we designed the corresponding orthogonal matrix tests, and obtained the influence trend of power, pressure and ashing gas on the etching rate and uniformity of PR. The results show that O
2
is the main ashing gas, and the smaller the proportion of O
2
, the lower the etching rate. Power is positively correlated with etching rate, while pressure is negatively correlated with etching rate.