Simulation Investigation On The Characteristics Of Gan-Based Multi-Quantum Wells Micro-Leds

Micro-LED has been recognized as a promising candidate for next-generation display and emerging communication technology owing to its excellent properties, such as high modulation bandwidth, high saturation current density and outstanding luminous power efficiency. In this study, the characteristics of the GaN-based multi-quantum wells micro-LEDs with various epitaxial structures were investigated based on the theoretical simulations using Silvaco-TCAD software. The structural parameters including Al content in Alx Ga1-xN of the electron-blocking layer, In content in Iny Ga1-yN of the quantum well layer, and quantum-well periods are regulated to reveal their influences on the optical and electrical properties of the device. These are for the purpose of exploring the optimal performance of micro-LEDs to implement multifunction applications, for instance, micro-display and visible light communication.