A 14.7mW 4Gb/s/lane Wireless Through Silicon Interface For Memory Cube Exploiting 16-QAM and Magnetic Resonance

A 14. 7mW4Gb/s/lane wireless TSI (through silicon interface) employing magnetic resonance and 16-QAM (quadrature amplitude modulation) is presented for 3D (three dimensional) stacked memory cube. In this scenario, taking advantage of broadband low noise signal approach and high order modulation, 4x symbol data rate and long-distance transmission could be obtained simultaneously. The transmitter based on source follower common-mode amplitude modulator is developed to increase the voltage headroom and the saturated output power. Besides, a double Gm-boost LNA is proposed to achieve high power efficiency and ultrahigh sensitivity, respectively. The proposed interface prototype is designed with 55nm CMOS process and achieves a maximum data rate of 4Gb/s/lane at transfer distance of 300um while dissipating 14. 72mW from a 1. 2V supply.