An Effective Method to Minimize the Difference Between Spot and Ribbon Beam in S/D Region by Carbon Co-Implantation

The device matching of different implanters with single-wafer ribbon beam to batch-wafer spot beam is difficult due to their significant differences in beam shape and scanning architecture, which lead to diverse damage accumulation and final amorphous layer thickness. Especially for Source/Drain (S/D) doping with high concentration and high mechanical stress, implant condition with single wafer ribbon beam may suffer severe dislocation defect while not with the batch type spot beam. In this paper, by modulating the dose rate or damage process on the single-wafer implanter, a series of experiment were performed to match the batch-wafer spot beam dislocation performance. Carbon co-implantation was demonstrated as the most effective way to avoid dislocation formation, while changing beam current, using cold-implantation or using Ge co-implantation has no positive effect on the silicon defect relieving.