A Composite Photodector with Wide Dynamic Range and Small Area for Dynamic Vision Sensor Application

In this paper, we design and simulate a photodetector with a photodiode-body-biased MOSFET (PD-MOSFET) and apply it to the dynamic vision camera (DVS). The parameters of the process and simulation are adjusted for the DC characteristics, spectral characteristics and transient response of PD-MOSFET. Compared with traditional photodiode (PD), the photocurrent of PD-MOSFET can be increased from $1.4e^{-12}A \sim 6.8e^{-7}A$. The spectral peak is around 550 nm and the latency range from 6us $(10^{5}1x)$ to 0.2s (0.1lx). DVS improves the dynamic range of PD-MOSFET to 120 dB compared to traditional DVS.