The Study on Thermal Performance of Cooling System and Interconnection Layer for High-Temperature SiC Applications

This paper investigates the thermal performance of silicon carbide (SiC) power device/module in high-temperature environments from two aspects: cooling system and interconnection layer. Based on a double-sided power module with high power density and high operating temperature, experiments and simulations are conducted on the relationship between cooling methods in high-temperature environments and the power capacity of SiC converters. The results show that increasing heat transfer area is an effective way to improve the cooling capacity. With state-of-the-art technology, air-based impinging jet cooling may be the most competitive method in high-temperature applications. For interconnection layers, compared to Semi-sintering nano-silver materials, full-sintering nano-silver materials have become the preferred packaging material for high-temperature applications due to their high thermal conductivity and high melting point. But after simultaneous thermal analysis, the phenomenon of over-sintering at high temperatures may cause reliability issues.