Sub-6 GHz LNA Using Two-Stage SNIM With Series Interstage Inductor Based on 0.5-μm GaAs E-pHEMT Technology

This study presents a high gain, ultralow noise, sub-6 GHz low noise amplifier (LNA) using 0.5-
$\mu \text{m}$
GaAs pseudomorphic high electron mobility transistor (pHEMT) process. It proposed a simultaneous input and noise matching (SNIM) technique using load impedance optimization as an interstage inductor of a two-stage amplifier. The proposed matching technique offers optimal noise performance without the input matching trade-off. The proposed LNA delivers the best noise performance compared to other sub-6 GHz LNAs using the 0.5-
$\mu \text{m}$
GaAs pHEMT process. The results show a peak gain of 27.6 dB, and noise figure (NF) of 0.66 dB in the 4.2–5.2 GHz range. The input
${\text {P}}_{\text {1 dB}}$
at 5 GHz is 23.5 dBm, and the LNA consumes 45.6 mW of power at a supply voltage of 1.2 V. The chip size is
$0.87\times 1.78\,\,{\text {mm}}^{2}$
.