High Performance Inversion-Mode In0.53Ga0.47As FinFETs for Logic and RF Applications

An inversion-mode In
_0.53
Ga
_0.47
As FinFET exhibiting a transition frequency (f
_T
) of 271 GHz and a maximum oscillation frequency (f
_max
) of 78 GHz at V
_ds
= 0.5 V is reported in this work. Simultaneously, the transconductance (g
_m
) of 2056 (μS/μm) and drain induced barrier lowering (DIBL) of 121 (mV/V) obtained were also exhibited. Moreover, a subthreshold swing (SS) of 86 and 97 (mV/dec) was obtained at V
_ds
= 0.05 and 0.5 V, respectively. These exceptional properties are the result of employing N
₂
remote plasma treatment, enhancing the quality of high-k/III-V interface and carrier mobility. The fin structure contributes to good suppression of short channel effects (SCEs), and the superior transfer characteristics are due to the improved gate controllability. We also extracted an effective electron velocity (ν
_eff
) of 2.18 × 10
⁷
(cm/s) by delay time analysis, providing a probable explanation for the obtained f
_T
performance. This work explicitly exhibits the potential of high-performance inversion-mode InGaAs FinFETs, positioning them as promising candidates for future high-frequency system applications.