Real-Time Discrete Model of Dual Active Bridge Converter with Integrated Loss Model of SiC MOSFETs

This paper presents the real-time discrete model of a dual active bridge (DAB) converter under extended-phase-shift (EPS) modulation. The model is integrated with an experimental-based loss model of the 1200 V Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) half-bridge module. A simplified real-time discrete electro-thermal model for fast prototyping and thermal performance analysis of the DAB converter is developed. The switching energy values obtained from the double pulse tests (DPTs) along with the half-bridge module’s thermal network values are integrated into this model to obtain the junction temperature of the SiC MOSFETs. The proposed real-time discrete model is capable of accelerating the simulation time by approximately 4 times.