Kelvin Source Package to Maximize 1200V SiC MOSFET Performance in Solar Inverter Applications

1200V SiC MOSFETs are quickly penetrating to the solar inverter applications, EV charging station, and on-board chargers (OBCs). Increasing the PV array voltage of solar inverters up to 1500V from 1000V can improve end-to-end efficiency and reduce installation cost. EV charger systems require bi-directional operation and charge up to 800V batteries of electrical vehicles (EVs). 1200V SiC MOSFETs are the best solution for stable performance against switching frequency and temperature enables high flexibility in overall system design, trading off between efficiency and power density requirements especially for outdoor applications that is operated under harsh environmental conditions. The purpose of this paper is to highlight the key performance of Power Master Semiconductor’s 1200V e SiC MOSFET in TO-247-4L package compared to competitor’s 1200V SiC trench and planar MOSFETs, and describe how to reduce switching losses and gate noise by using TO-247-4L kelvin source package in device level and system level.