Fabrication of low-resistance Sn ohmic contacts on n-type InxGa1-xAsyP1-y for optoelectronic devices

To examine the contact behavior, Tin (Sn) electrodes are fabricated on an n-InGaAsP (1000 nm)/InP (50 µm) stack by physical vapor deposition (PVD) technique with sizes of 10 nm and 50 nm. The study of current-voltage (I-V) behavior is applied in forward and revere biasing voltage of - 5 V to + 5 V in an in-situ temperature ranges of 300 K to 350 K. To gauge the electrical and transport properties of the device, Ohmic and Schottky behavior in line with barrier height, Richardson constant, conductance and resistances are thoroughly examined. It observed that a maximum forward current of 3.25 mA is achieved at 0.8 V for 340 K in a 10nm-Sn-InGaAsP stack. In reverse mode, the 50nm-Sn-InGaAsP stack maximum current is measured at 310 K of 3.20 mA for 0.9 V. The contact resistance for 10-nm and 50-nm Sn contact was approximately 4.96x10
^-5
Ω-cm
⁻²
and 2.6x10
^-6
Ω-cm
⁻²
respectively.